Semiconductor Radiation Detectors: Device PhysicsSpringer Science & Business Media, 1 nov 2001 - 283 páginas Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. |
Índice
I | 1 |
II | 5 |
III | 7 |
V | 8 |
VI | 11 |
VII | 14 |
VIII | 16 |
IX | 17 |
XC | 182 |
XCI | 190 |
XCIII | 191 |
XCIV | 192 |
XCV | 195 |
XCVI | 196 |
XCVII | 197 |
XCVIII | 200 |
XI | 19 |
XII | 21 |
XIV | 22 |
XV | 23 |
XVI | 25 |
XVII | 26 |
XVIII | 28 |
XIX | 29 |
XX | 31 |
XXI | 34 |
XXII | 37 |
XXIII | 39 |
XXVI | 43 |
XXVII | 46 |
XXVIII | 49 |
XXIX | 51 |
XXX | 56 |
XXXI | 58 |
XXXII | 59 |
XXXIV | 62 |
XXXV | 68 |
XXXVI | 69 |
XXXVII | 70 |
XXXVIII | 72 |
XXXIX | 73 |
XL | 77 |
XLI | 79 |
XLIII | 83 |
XLIV | 84 |
XLV | 86 |
XLVI | 88 |
XLVIII | 89 |
L | 90 |
LI | 91 |
LIII | 93 |
LIV | 95 |
LV | 100 |
LVI | 102 |
LVII | 105 |
LVIII | 106 |
LIX | 107 |
LX | 109 |
LXII | 110 |
LXIII | 112 |
LXIV | 114 |
LXV | 115 |
LXVI | 116 |
LXVII | 125 |
LXVIII | 127 |
LXIX | 132 |
LXX | 133 |
LXXI | 134 |
LXXII | 136 |
LXXIII | 137 |
LXXIV | 138 |
LXXV | 140 |
LXXVII | 143 |
LXXVIII | 144 |
LXXX | 153 |
LXXXIII | 160 |
LXXXIV | 165 |
LXXXV | 175 |
LXXXVI | 178 |
LXXXVII | 180 |
LXXXIX | 181 |
XCIX | 201 |
C | 202 |
CI | 203 |
CIII | 205 |
CIV | 206 |
CVI | 207 |
CVIII | 210 |
CIX | 211 |
CX | 212 |
CXI | 216 |
CXII | 222 |
CXIII | 225 |
CXIV | 229 |
CXVI | 231 |
CXVII | 233 |
CXVIII | 239 |
CXX | 243 |
CXXI | 244 |
CXXII | 247 |
CXXIII | 251 |
CXXIV | 253 |
CXXV | 254 |
CXXVII | 255 |
CXXVIII | 257 |
CXXIX | 258 |
CXXX | 259 |
CXXXII | 260 |
CXXXIII | 261 |
CXXXV | 262 |
CXXXVI | 263 |
CXXXVIII | 264 |
CXL | 265 |
CXLI | 266 |
CXLII | 267 |
CXLIV | 268 |
CXLV | 273 |
CXLVI | 275 |
CXLVII | 276 |
CXLVIII | 277 |
CXLIX | 279 |
CL | 288 |
CLI | 296 |
CLII | 300 |
CLIII | 301 |
CLV | 302 |
CLVI | 303 |
CLVIII | 307 |
CLIX | 309 |
CLX | 310 |
CLXI | 313 |
CLXIII | 314 |
CLXIV | 315 |
CLXV | 317 |
CLXVI | 319 |
CLXVII | 320 |
CLXVIII | 322 |
CLXIX | 327 |
CLXX | 330 |
CLXXI | 333 |
CLXXII | 335 |
CLXXIII | 339 |
341 | |
342 | |
349 | |
Otras ediciones - Ver todo
Semiconductor Radiation Detectors: Device Physics Gerhard Lutz No hay ninguna vista previa disponible - 2007 |
Semiconductor Radiation Detectors: Device Physics Gerhard Lutz No hay ninguna vista previa disponible - 2009 |
Términos y frases comunes
acceptor amplifier annealing anode atoms band gap biasing bulk capacitance capture carrier concentration channel charge carriers charge collection charge density circuit conduction band constant crystal defects dependence device diffusion diode donor doping doping concentration drain drift detector electric field electron-hole pairs electrons and holes emission energy levels equation example Fermi level field effect transistors fully depleted function GaAs gate voltage implantation input Instr insulator integrated interface internal gate intrinsic ionization irradiation JFET lattice measurement metal Meth minority carrier MOSFET n-type noise Nucl obtained output oxide charge p-channel particle pixel detector Poisson's equation position potential properties punch-through radiation readout recombination resistor reverse-bias saturation Sect semiconductor semiconductor detectors shown in Fig signal charge silicon SiO2 space-charge region strip detectors substrate temperature thermal equilibrium transconductance transistor trapping undepleted valence band VD,sat Vsub wafer width zero